Thin Epitaxial Silicon for De/Dx Detectors

Ultraviolet detectors based on annealed zinc oxide thin films: epitaxial growth and physical characterizations

In this report, ultraviolet (UV) detectors were fabricated based on zinc oxide thin films. The epitaxial growth of zinc oxide thin films was carried out on bare glass substrate with preferred orientation to (002) plane of wurtzite structure through radio frequency sputtering technique. The structural properties indicated a dominant peak at 2θ=34.28º which was matched with JCPDS reference card N...

Thin-film silicon detectors for particle detection

Integrated particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 μm). Corresponding diodes w...

Far-infrared free-hole absorption in epitaxial silicon films for homojunction detectors

We report on the investigation of free-carrier absorption characteristics for epitaxially grown p-type silicon thin films in the far-infrared region ~50–200 mm!, where Si homojunction interfacial workfunction internal photoemission ~HIWIP! detectors are employed. Five Si thin films were grown by molecular beam epitaxy on different silicon substrates over a range of carrier concentrations, and t...

Epitaxial Thin Film Crystalline Silicon Solar Cells on low Cost Silicon Carriers

In order to substantially reduce the costs of present crystalline Si solar cells, the material consumption of highly pure Si in a typical solar cell structure should be reduced. Most of the crystalline Si material merely acts as a mechanical carrier for the solar cell device with most of the optical absorption taking place in the upper 30μm region. When special care is taken to maximize optical...

Epitaxial Silicon Solar Cells